DocumentCode :
3363920
Title :
Organic resistive memory devices: Performance enhancement and advanced integration architecture
Author :
Cho, Byungjin ; Song, Sunghoon ; Ji, Yongsung ; Lee, Takhee
Author_Institution :
School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea
fYear :
2011
fDate :
18-21 Oct. 2011
Firstpage :
295
Lastpage :
296
Abstract :
Up to date, various strategies to develop memory devices electrically and structurally optimized have been proposed. Herein, we report the following strategies in terms of performance enhancement and advanced integration architecture: O2 plasma treatment on bottom electrodes to optimize memory performance and hybrid-type one-diode and one-resistor devices to improve reading efficiency which would open a way toward practically applicable organic memory devices.
Keywords :
Arrays; Artificial intelligence; Gold; Performance evaluation; Plasmas; Resistors; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
Type :
conf
DOI :
10.1109/NMDC.2011.6155362
Filename :
6155362
Link To Document :
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