• DocumentCode
    3363920
  • Title

    Organic resistive memory devices: Performance enhancement and advanced integration architecture

  • Author

    Cho, Byungjin ; Song, Sunghoon ; Ji, Yongsung ; Lee, Takhee

  • Author_Institution
    School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Korea
  • fYear
    2011
  • fDate
    18-21 Oct. 2011
  • Firstpage
    295
  • Lastpage
    296
  • Abstract
    Up to date, various strategies to develop memory devices electrically and structurally optimized have been proposed. Herein, we report the following strategies in terms of performance enhancement and advanced integration architecture: O2 plasma treatment on bottom electrodes to optimize memory performance and hybrid-type one-diode and one-resistor devices to improve reading efficiency which would open a way toward practically applicable organic memory devices.
  • Keywords
    Arrays; Artificial intelligence; Gold; Performance evaluation; Plasmas; Resistors; Switches;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
  • Conference_Location
    Jeju
  • Print_ISBN
    978-1-4577-2139-7
  • Type

    conf

  • DOI
    10.1109/NMDC.2011.6155362
  • Filename
    6155362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3363920