Title :
High Energy Neutron Multiple-Bit Upset
Author :
Tipton, Alan D. ; Pellish, Jonathan A. ; Fleming, Patrick R. ; Schrimpf, Ronald D. ; Reed, Robert A. ; Weller, Robert A. ; Mendenhall, Marcus H. ; Massengill, Lloyd W.
Author_Institution :
Vanderbilt Univ., Nashville
fDate :
May 30 2007-June 1 2007
Abstract :
Neutron-induced multiple-bit upsets (MBU) in a 90 nm CMOS SRAM are examined using Monte-Carlo simulations. While the single-bit upset (SBU) cross section is nearly independent of angle, the probability of MBU increases for neutrons incident at grazing angles.
Keywords :
CMOS memory circuits; Monte Carlo methods; SRAM chips; neutron effects; probability; CMOS SRAM; MBU; Monte-Carlo simulation; SBU; neutron-induced multiple-bit upsets; probability; single-bit upset; size 90 nm; CMOS technology; Circuit simulation; Computational modeling; Monte Carlo methods; NASA; Neutrons; Radiation effects; Random access memory; Space technology; Voltage; multiple-bit upset; neutron; radiation effects; soft error;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299575
