DocumentCode
3363948
Title
High Energy Neutron Multiple-Bit Upset
Author
Tipton, Alan D. ; Pellish, Jonathan A. ; Fleming, Patrick R. ; Schrimpf, Ronald D. ; Reed, Robert A. ; Weller, Robert A. ; Mendenhall, Marcus H. ; Massengill, Lloyd W.
Author_Institution
Vanderbilt Univ., Nashville
fYear
2007
fDate
May 30 2007-June 1 2007
Firstpage
1
Lastpage
3
Abstract
Neutron-induced multiple-bit upsets (MBU) in a 90 nm CMOS SRAM are examined using Monte-Carlo simulations. While the single-bit upset (SBU) cross section is nearly independent of angle, the probability of MBU increases for neutrons incident at grazing angles.
Keywords
CMOS memory circuits; Monte Carlo methods; SRAM chips; neutron effects; probability; CMOS SRAM; MBU; Monte-Carlo simulation; SBU; neutron-induced multiple-bit upsets; probability; single-bit upset; size 90 nm; CMOS technology; Circuit simulation; Computational modeling; Monte Carlo methods; NASA; Neutrons; Radiation effects; Random access memory; Space technology; Voltage; multiple-bit upset; neutron; radiation effects; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
1-4244-0757-5
Electronic_ISBN
1-4244-0757-5
Type
conf
DOI
10.1109/ICICDT.2007.4299575
Filename
4299575
Link To Document