Title :
Soft-Error Charge-Sharing Mechanisms at Sub-100nm Technology Nodes
Author :
Massengill, L.W. ; Amusan, O.A. ; DasGupta, S. ; Sternberg, A.L. ; Black, J.D. ; Witulski, A.F. ; Bhuva, B.L. ; Alles, M.L.
Author_Institution :
Vanderbilt Univ., Nashville
fDate :
May 30 2007-June 1 2007
Abstract :
Analyses of ion-induced charge sharing effects at the 90 nm CMOS technology node are discussed. Two mechanisms leading to enhanced charge collection and increased soft error sensitivity are presented.
Keywords :
CMOS integrated circuits; sensitivity analysis; CMOS technology node; charge collection; ion induced charge sharing effects; size 90 nm; soft error sensitivity; sub 100 nm technology; CMOS digital integrated circuits; CMOS technology; Error analysis; Integrated circuit technology; Isolation technology; Radiation hardening; Single event upset; Space technology; Structural engineering; Voltage; SER; SEU mechanisms; charge collection; charge sharing; single event effects; soft errors;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299576
