DocumentCode
3363967
Title
Modeling Alpha and Neutron Induced Soft Errors in Static Random Access Memories
Author
Warren, Kevin M. ; Wilkinson, Jeffrey D. ; Morrison, Scott ; Weller, Robert A. ; Porter, Mark E. ; Sierawski, Brian D. ; Reed, Robert A. ; Mendenhall, Marcus H. ; Schrimpf, Ron D. ; Massengill, Lloyd W.
Author_Institution
Inst. for Space & Defense Electron., Nashville
fYear
2007
fDate
May 30 2007-June 1 2007
Firstpage
1
Lastpage
4
Abstract
Experimental thermal neutron and alpha soft error test results of a 4 Mbit SRAM fabricated on a 0.25 mum process are evaluated using Vanderbilt University´s RADSAFE toolkit. The capabilities of the radiation transport code are demonstrated by accurately reproducing experimental results and predicting operational soft error rates for the memory.
Keywords
SRAM chips; errors; SRAM; radiation transport code; soft errors; static random access memories; Circuit simulation; Error analysis; Neutrons; Radioactive materials; Random access memory; SRAM chips; Semiconductor materials; Solid modeling; Testing; USA Councils; alpha; neutron; radiation; reliability; soft error;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location
Austin, TX
Print_ISBN
1-4244-0757-5
Electronic_ISBN
1-4244-0757-5
Type
conf
DOI
10.1109/ICICDT.2007.4299577
Filename
4299577
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