DocumentCode
3363980
Title
Properties of photochlorinated graphene
Author
Wu, Di ; Li, Bo ; Zhou, Lin ; Peng, Railin ; Yan, Kai ; Zhou, Yu ; Liu, Zhongfan
Author_Institution
College of Chemistry and Molecular Engineering, Peking University, China
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
308
Lastpage
310
Abstract
We report the synthesis and electronic properties of chlorinated graphene, a totally new graphene derivative. The gas-phase photochlorination of graphene, followed by the structural transformation of the C-C bonds from sp2 to sp3 configuration, could remove the conducting π-bands and open up a band gap in graphene. After chlorination, the resistance of graphene increases over 4 orders of magnitude. Moreover, the resistance of chlorinated graphene shows a significant temperature dependence. Electrical transport in chlorinated graphene is well described by variable range hopping in two dimensions due to the presence of localized states in the band gap. The facile, highly efficient and patternable photochlorination method offers a feasible pathway to engineer the band structure of graphene.
Keywords
Chemistry; Field effect transistors; Graphene; Logic gates; Q measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location
Jeju
Print_ISBN
978-1-4577-2139-7
Type
conf
DOI
10.1109/NMDC.2011.6155366
Filename
6155366
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