Title :
ZnO thin films produced by the RF magnetron sputtering
Author :
Huawa Yu ; Jing Wang ; Yangan Yan ; Xin Wang ; Bin Gao ; Hanchen Liu ; Yali Du
Author_Institution :
Sch. of Sci., Xi´an Polytech. Univ., Xi´an, China
Abstract :
ZnO thin films with (002) orientation have been deposited on Si(100) substrate by radio frequency (RF) magnetron sputtering technique. The influence of RF power and oxygen ratio on the the grain size, the residual stress and optical properties was investigated by X-ray diffraction, transmission spectra and photoluminescence spectra. The results show that the ZnO film deposited with sputtering power (100 W) and oxygen ratio(60%), can obtain its best c-axis orientation and crystallization and that tension stress of the film reaches the lowest, and a strong UV photoluminescence(PL) peak and a weak blue emission peak were observed.
Keywords :
II-VI semiconductors; X-ray diffraction; crystallisation; grain size; infrared spectra; internal stresses; photoluminescence; semiconductor growth; semiconductor thin films; sputter deposition; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; (002) orientation; RF magnetron sputtering; RF power; Si; Si(100) substrate; UV photoluminescence spectra; X-ray diffraction; ZnO; blue emission peak; c-axis orientation; crystallization; grain size; oxygen ratio; residual stress; tension stress; thin films; transmission spectra; Magnetic films; Optical films; Radio frequency; Sputtering; Substrates; Zinc oxide; RF magnetron sputtering; Visible spectrum; Zinc Oxide Film;
Conference_Titel :
Electronic and Mechanical Engineering and Information Technology (EMEIT), 2011 International Conference on
Conference_Location :
Harbin, Heilongjiang, China
Print_ISBN :
978-1-61284-087-1
DOI :
10.1109/EMEIT.2011.6023604
