DocumentCode
3364076
Title
Preparation and characterization of ferroelectric YMnO3 thin film
Author
Guo, H.Y. ; Wilson, I.H. ; Xul, J.B. ; Cheung, W.Y. ; Ke, N. ; Sundaral, B. ; Luo, E.Z. ; Lin, J. ; Yu, J.
Author_Institution
Electron. Eng. Dept., Chinese Univ. of Hong Kong, Shatin, China
Volume
2
fYear
2000
fDate
2000
Firstpage
657
Abstract
Preferential (0004) oriented ferroelectric YMnO3 thin films were prepared on Si substrates using inorganic precursors by sol-gel method. x-ray diffraction (XRD) measurement was used to find out suitable processing temperature. A 0.4 volt C-V window was obtained for the MFS structure at room temperature. And a wider C-V window of 0.8 volt was obtained at 200 K. Also Rutherford Backscattering Spectrometry (RBS) and AFM were used to characterize the films
Keywords
MIS structures; Rutherford backscattering; X-ray diffraction; atomic force microscopy; ferroelectric thin films; sol-gel processing; yttrium compounds; 200 K; 300 K; AFM; C-V characteristics; MFS structure; Rutherford backscattering spectrometry; Si; Si substrate; X-ray diffraction; YMnO3; YMnO3 ferroelectric thin film; inorganic precursor; preferential orientation; sol-gel method; Annealing; Capacitance-voltage characteristics; Dielectric thin films; FETs; Ferroelectric films; Ferroelectric materials; Polarization; Substrates; Temperature; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.942406
Filename
942406
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