Title :
Design of Small Area and Low Power Consumption Mask ROM
Author :
Wei Cui ; Siliang Wu
Author_Institution :
Beijing Inst. of Technol., Beijing
fDate :
May 30 2007-June 1 2007
Abstract :
The compact full custom layout design of a 16-Kb mask-programmable CMOS ROM with low power dissipation is introduced in this paper. By optimizing storage cell size and peripheral circuit structure, the ROM has a small area of 0.050 mm2 with a power-delay product of 0.011 PJ/bit at +1.8 V. The high packing density and the excellent power-delay product have been achieved by using SMIC 0.18 mum 1P6M CMOS technology. A novel and simple sense amplifier/driver structure is presented which restores the signal full swing efficiently and reduces the signal rising time by 2.4 ns, as well as the memory access time. The ROM has a fast access time of 8.6 ns. As a consequence, not only the layout design can be embedded into microprocessor system as its program memory, but also can be fabricated individually as ROM ASIC.
Keywords :
CMOS integrated circuits; integrated circuit layout; microcomputers; read-only storage; SMIC 0.18 mum 1P6M CMOS technology; amplifier-driver structure; compact full custom layout design; low power consumption; mask-programmable CMOS ROM; memory access time; microprocessor system; power-delay product; program memory; read-only memory; size 0.18 mum; storage capacity 16 Kbit; time 2.4 ns; time 8.6 ns; voltage 1.8 V; Application specific integrated circuits; CMOS memory circuits; CMOS technology; Driver circuits; Energy consumption; Microprocessors; Power dissipation; Power system restoration; Read only memory; Signal restoration; Address Decoder; CMOS Technology; Read Only Memory (ROM); Sense Amplifier;
Conference_Titel :
Integrated Circuit Design and Technology, 2007. ICICDT '07. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
1-4244-0757-5
Electronic_ISBN :
1-4244-0757-5
DOI :
10.1109/ICICDT.2007.4299585