Title :
Fabrication of bulk acoustic wave resonator based on AlN thin film
Author :
Jie Yang ; Xiang-quan Jiao ; Rui Zhang ; Hui Zhong ; Yu Shi
Author_Institution :
State Key Lab. of Electron. Thin Films & integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
AlN thin film is an ideal material for preparing BAW resonator.Bulk acoustic wave (BAW) resonator based on AlN thin films is compatible with standard IC technologies. This advantage makes sense for realizing a one-chip front-end circuit. In this study, a reliably process for making an air-gap bulk acoustic wave resonator based on AlN thin film was reported. Highly c-axis oriented AlN thin film was achieved on Mo electrode by reactive radio frequency sputtering technique. An improved planarization process and extending the edge of bottom electrode were introduced to avoid AlN thin film cracking at the steps. The BAW resonator, with 100nm bottom electrode, 2500nm AlN piezoelectric layer and 300nm top electrode,has exhibits a resonant frequency of around 1.51GHz.
Keywords :
III-V semiconductors; UHF resonators; acoustic resonators; aluminium compounds; bulk acoustic wave devices; electrodes; machine insulation; piezoelectric devices; semiconductor thin films; sputter deposition; thin film devices; wide band gap semiconductors; AlN; BAW resonator; bottom electrode; electrode; frequency 1.51 GHz; one-chip front-end circuit; piezoelectric layer; planarization process; reactive radio frequency sputtering technique; resonant frequency; size 100 nm; size 2500 nm; size 300 nm; standard IC technologies; thin film-based air gap bulk acoustic wave resonator; Acoustic waves; Air gaps; Electrodes; Films; Substrates; Surface treatment; AlN; Bulk acoustic wave (BAW) resonator; C-axis oriented; Cracking;
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4814-0
DOI :
10.1109/SPAWDA.2012.6464068
