Charge transfer mechanisms of P3HT: PCBM photovoltaic cells containing a tungsten oxide hole transport layer

Author

Lee, Pi Suk ; Kim, Dae Hun ; Lee, Se Han ; Lim, Isuel ; Han, Sung Hwan ; Kim, Tae Whan

Author_Institution

Dept. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

353

Lastpage

356

Abstract

Organic photovoltaic (OPV) cells containing a tungsten oxide (WO₃) layer inserted between the indium-tin-oxide and the poly(3-hexylthiophene) and the derivative [6,6]-phenyl-C₆₁-butyric acid methyl ester active layer were fabricated. The short circuit current density, the open circuit voltage, the fill factor, and power conversion efficiency of the OPV cells under an AM 1.5G were 7.45 mA/cm², 0.63 V, 0.59, and 2.8%, respectively. The charge transfer mechanisms of the OPV cells containing a WO₃ layer are described on the basis of the experimental results and energy band diagrams.

Keywords

charge exchange; current density; polymers; short-circuit currents; solar cells; tungsten compounds; ITO; OPV cells; P3HT:PCBM photovoltaic cells; WO₃; [6,6]-phenyl-C₆₁-butyric acid methyl ester active layer; charge transfer mechanism; energy band diagram; fill factor; indium-tin-oxide; open circuit voltage; organic photovoltaic cells; poly(3-hexylthiophene); power conversion efficiency; short circuit current density; tungsten oxide hole transport layer; Artificial intelligence; Electrodes; Indium tin oxide; Optical device fabrication; Polymers; Solar power generation; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE

Conference_Location

Jeju

Print_ISBN

978-1-4577-2139-7

Type

conf

DOI

10.1109/NMDC.2011.6155375

Filename

6155375