Title :
Charge transfer mechanisms of P3HT: PCBM photovoltaic cells containing a tungsten oxide hole transport layer
Author :
Lee, Pi Suk ; Kim, Dae Hun ; Lee, Se Han ; Lim, Isuel ; Han, Sung Hwan ; Kim, Tae Whan
Author_Institution :
Dept. of Electron. & Comput. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
Organic photovoltaic (OPV) cells containing a tungsten oxide (WO3) layer inserted between the indium-tin-oxide and the poly(3-hexylthiophene) and the derivative [6,6]-phenyl-C61-butyric acid methyl ester active layer were fabricated. The short circuit current density, the open circuit voltage, the fill factor, and power conversion efficiency of the OPV cells under an AM 1.5G were 7.45 mA/cm2, 0.63 V, 0.59, and 2.8%, respectively. The charge transfer mechanisms of the OPV cells containing a WO3 layer are described on the basis of the experimental results and energy band diagrams.
Keywords :
charge exchange; current density; polymers; short-circuit currents; solar cells; tungsten compounds; ITO; OPV cells; P3HT:PCBM photovoltaic cells; WO3; [6,6]-phenyl-C61-butyric acid methyl ester active layer; charge transfer mechanism; energy band diagram; fill factor; indium-tin-oxide; open circuit voltage; organic photovoltaic cells; poly(3-hexylthiophene); power conversion efficiency; short circuit current density; tungsten oxide hole transport layer; Artificial intelligence; Electrodes; Indium tin oxide; Optical device fabrication; Polymers; Solar power generation; Substrates;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155375
