Title :
Charge density formulation for plasmons in the retarded regime
Author :
Smaili, Sami ; Massoud, Yehia
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Alabama at Birmingham, Birmingham, AL, USA
Abstract :
In this paper we derive the retarded dispersion relation for plasmons at the interface between a semi-infinite metal and a semi-infinite dielectric starting from the charge density and the current density. We use the retarded electric and magnetic potentials to arrive at the surface plasmon dispersion relation. Additionally, we derive the electric and magnetic fields using the potentials and show that the derived field components obey the same relations with respect to each other as the plasmon fields. The approach we present in this paper is helpful for deriving transmission line models for plasmonic interconnect structures, which are proposed as replacements for the traditional copper interconnects in future VLSI systems. This in turn is important to study the properties of such structures as interconnects.
Keywords :
charge density waves; copper; current density; dielectric function; dispersion relations; electric fields; magnetic fields; permittivity; plasmonics; surface plasmons; Cu; VLSI system; charge density formulation; copper interconnects; current density; dielectric constant; dielectric function; electric fields; magnetic fields; plasmonic interconnect structure; semiinfinite dielectric; semiinfinite metal; surface plasmon dispersion relation; transmission line models; CMOS integrated circuits; Computational modeling; Delay; Integrated circuit modeling; Magnetic separation; Optical filters; Semiconductor device modeling;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155376