Field emitter triode for power switching-a new power device candidate

There is a possibility that field emitter triodes may break through the limitations to which Si devices are subject due to the inherent properties of Si materials, because a vacuum can act as a good insulator and emitted electrons can move freely. We therefore propose the field emitter triode as a new power device candidate. For a power switching study, a new self-aligned Si gate triode has been developed using the transfer mold technique. As a result, the switching phenomenon was observed for the first time