Field emitter triode for power switching-a new power device candidate

Author

Ono, Tomio ; Sakai, Tadashi ; Sakuma, Naoshi ; Nakayama, Kazuya ; Ohashi, Hiromichi

Author_Institution

Toshiba Corp., Kawasaki, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

151

Lastpage

154

Abstract

There is a possibility that field emitter triodes may break through the limitations to which Si devices are subject due to the inherent properties of Si materials, because a vacuum can act as a good insulator and emitted electrons can move freely. We therefore propose the field emitter triode as a new power device candidate. For a power switching study, a new self-aligned Si gate triode has been developed using the transfer mold technique. As a result, the switching phenomenon was observed for the first time

Keywords

elemental semiconductors; power semiconductor switches; silicon; triodes; vacuum insulation; vacuum microelectronics; Si; Si devices; Si materials; emitted electron mobility; field emitter triode; field emitter triode power device; power device; power switching; self-aligned Si gate triode; switching phenomenon; transfer mold technique; vacuum insulator; Anisotropic magnetoresistance; Bonding; Electron emission; Fabrication; Flexible AC transmission systems; Insulation; Oxidation; P-n junctions; Pulse power systems; Sputter etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702657

Filename

702657