Title :
Resistive switching behaviors of the ZnO/SiOx/ZnO tri-layer for nonvolatile memory devices
Author :
Kim, Youngill ; Kim, Eunkyeom ; Jeong, Jaekyu ; Kyoungwan Park
Author_Institution :
Department of Nano Science & Technology, University of Seoul, 130-743, Korea
Abstract :
Bipolar resistive switching effects were investigated for nonvolatile memory applications in a ZnO/SiOx/ZnO structure. ZnO thin films were grown by radio frequency magnetron sputtering at room temperature. And SiOx films were grown by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. The resistance ratios of high/low resistance state were in the range of about 1 order. The resistive random access memory with this structure will show a great promise for high density memory device.
Keywords :
Films; Nonvolatile memory; Performance evaluation; Resistance; Sputtering; Switches; Zinc oxide;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
Conference_Location :
Jeju
Print_ISBN :
978-1-4577-2139-7
DOI :
10.1109/NMDC.2011.6155383
