• DocumentCode
    3364347
  • Title

    Resistive switching behaviors of the ZnO/SiOx/ZnO tri-layer for nonvolatile memory devices

  • Author

    Kim, Youngill ; Kim, Eunkyeom ; Jeong, Jaekyu ; Kyoungwan Park

  • Author_Institution
    Department of Nano Science & Technology, University of Seoul, 130-743, Korea
  • fYear
    2011
  • fDate
    18-21 Oct. 2011
  • Firstpage
    384
  • Lastpage
    385
  • Abstract
    Bipolar resistive switching effects were investigated for nonvolatile memory applications in a ZnO/SiOx/ZnO structure. ZnO thin films were grown by radio frequency magnetron sputtering at room temperature. And SiOx films were grown by plasma enhanced chemical vapor deposition (PECVD) at 200 °C. The resistance ratios of high/low resistance state were in the range of about 1 order. The resistive random access memory with this structure will show a great promise for high density memory device.
  • Keywords
    Films; Nonvolatile memory; Performance evaluation; Resistance; Sputtering; Switches; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2011 IEEE
  • Conference_Location
    Jeju
  • Print_ISBN
    978-1-4577-2139-7
  • Type

    conf

  • DOI
    10.1109/NMDC.2011.6155383
  • Filename
    6155383
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3364347