Title :
Fabrication of piezoelectrically driven micro-cantilever using Pb(Zr, Ti)O3 films
Author :
Ahn, Jungryul ; Jun, Sungjin ; Kim, Dongwoo ; Yeom, Geun Young ; Yoo, Ji Beom ; Lee, Jaichan ; Sands, T.
Author_Institution :
Dept. of Mater. Eng., Sung Kyun Kwan Univ., Suwon, South Korea
Abstract :
Piezoelectrically driven micro-cantilevers using Pb(Zr, Ti)O3 (PZT) films have been successfully fabricated by bulk micro-machining. PZT thin films were made by sol-gel process using a 1-3 propanediol and modified alkoxide precursors. The cantilever structures consist of piezoelectric PZT capacitors fabricated on a low stress SiN x supporting layer. Flat micro-cantilever has been obtained by controlling the stress in Pt electrode and PZT layers. The dielectric constant and loss of the PZT thin films in the cantilever structure were 1000 and 2% at 100 kHz, respectively. The remanent polarization was 20 μC/cm2. The microcantilever had a dc response of 84 nm/V. The microcantilevers had a resonant frequency of 19.5 kHz and the corresponding displacement of 2.97 μm at the applied bias of 1 V
Keywords :
dielectric losses; dielectric polarisation; lead compounds; microactuators; micromachining; permittivity; piezoelectric actuators; piezoelectric thin films; sol-gel processing; 1 V; 100 kHz; 19.5 kHz; 2.97 micron; PZT; PZT thin films; PbZrO3TiO3; bulk micro-machining; dc response; dielectric constant; dielectric loss; displacement; piezoelectric capacitors; piezoelectrically driven micro-cantilevers; remanent polarization; resonant frequency; sol-gel process; Capacitors; Dielectric constant; Dielectric losses; Dielectric thin films; Electrodes; Fabrication; Piezoelectric films; Polarization; Silicon compounds; Stress control;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942421
