Title :
A comprehensive model for high pressure growth of InP crystals
Author :
Zou, Y.F. ; Zhang, T. ; Nunes, E. ; Zhang, H. ; Prasad, V. ; Ladeinde, F. ; Naraghi, M. ; Anselmo, A. ; Bliss, D.F. ; Gupta, K.P.
Author_Institution :
Consortium for Crystal Growth Res., State Univ. of New York, Stony Brook, NY, USA
Abstract :
We have developed a comprehensive model that accounts for oscillatory, laminar and turbulent flows caused by buoyancy and surface tension forces; forced convection due to crucible and crystal rotations; and complex thermal boundary conditions. The model also accounts for magnetohydrodynamics and sophisticated radiation heat exchange. Thermal elastic stress in the InP crystal is simultaneously calculated using the temperature distribution and crystal/melt interface shape obtained from the thermal transport simulation. A sophisticated adaptive grid generation technique together with the curvilinear finite volume discretization and several other high resolution numerical schemes have made it possible to simulate the growth of a compound crystal in a high pressure system
Keywords :
III-V semiconductors; crystal growth from melt; forced convection; heat transfer; high-pressure effects; indium compounds; laminar flow; magnetohydrodynamics; semiconductor growth; surface tension; temperature distribution; thermal stresses; turbulence; InP; InP crystals; LEC growth; adaptive grid generation technique; buoyancy; complex thermal boundary conditions; comprehensive model; crystal rotations; crystal/melt interface shape; curvilinear finite volume discretization; forced convection; high pressure growth; high pressure system; high resolution numerical schemes; laminar flow; magnetohydrodynamics; oscillatory flows; radiation heat exchange; surface tension forces; temperature distribution; thermal elastic stress; thermal transport simulation; turbulent flow; Boundary conditions; Crystals; Indium phosphide; Magnetohydrodynamic power generation; Mesh generation; Shape; Surface tension; Temperature distribution; Thermal force; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491928
