DocumentCode
3364513
Title
The cost study of 300mm through silicon interposer (TSI) with BEOL interconnect
Author
Li, H.Y. ; Katti, Guruprasad ; Ding, Lixin ; Bhattacharya, Surya ; Lo, G.Q.
fYear
2013
fDate
11-13 Dec. 2013
Firstpage
664
Lastpage
668
Abstract
The cost is always an important parameter for the new technical application. Through Si Via (TSV) technology becomes hot topic since image sensor application. We setup cost model according to our process flow and throughput for the cost study and reduction of 300mm TSI interposer. High cost area was calculated through the cost model. Full TSI process flow was separated as TSV, BEOL, Top UBM, TDDB, BSR, BS RDL& Bump sub-process flow. Top three high cost sub-process flow for 2.5D TSI with BEOL interconnect were identified from TSI process flow. Top three processes modules were isolated for each high cost subprocess flow. The high cost process modules were analyzed and explained in the paper. Two approaches were proposed for the cost reduction base on cost model analysis.
Keywords
cost reduction; integrated circuit bonding; integrated circuit interconnections; three-dimensional integrated circuits; BEOL interconnect; BS RDL; BSR; TDDB; TSI; TSV; backside via revealing; bump subprocess flow; cost model analysis; cost reduction; process throughput; size 300 nm; temporary bonding debonding; through silicon interposer; through silicon via; top UBM; Fabrication; Metals; Silicon; Three-dimensional displays; Through-silicon vias; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location
Singapore
Print_ISBN
978-1-4799-2832-3
Type
conf
DOI
10.1109/EPTC.2013.6745802
Filename
6745802
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