• DocumentCode
    3364513
  • Title

    The cost study of 300mm through silicon interposer (TSI) with BEOL interconnect

  • Author

    Li, H.Y. ; Katti, Guruprasad ; Ding, Lixin ; Bhattacharya, Surya ; Lo, G.Q.

  • fYear
    2013
  • fDate
    11-13 Dec. 2013
  • Firstpage
    664
  • Lastpage
    668
  • Abstract
    The cost is always an important parameter for the new technical application. Through Si Via (TSV) technology becomes hot topic since image sensor application. We setup cost model according to our process flow and throughput for the cost study and reduction of 300mm TSI interposer. High cost area was calculated through the cost model. Full TSI process flow was separated as TSV, BEOL, Top UBM, TDDB, BSR, BS RDL& Bump sub-process flow. Top three high cost sub-process flow for 2.5D TSI with BEOL interconnect were identified from TSI process flow. Top three processes modules were isolated for each high cost subprocess flow. The high cost process modules were analyzed and explained in the paper. Two approaches were proposed for the cost reduction base on cost model analysis.
  • Keywords
    cost reduction; integrated circuit bonding; integrated circuit interconnections; three-dimensional integrated circuits; BEOL interconnect; BS RDL; BSR; TDDB; TSI; TSV; backside via revealing; bump subprocess flow; cost model analysis; cost reduction; process throughput; size 300 nm; temporary bonding debonding; through silicon interposer; through silicon via; top UBM; Fabrication; Metals; Silicon; Three-dimensional displays; Through-silicon vias; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4799-2832-3
  • Type

    conf

  • DOI
    10.1109/EPTC.2013.6745802
  • Filename
    6745802