DocumentCode :
3364513
Title :
The cost study of 300mm through silicon interposer (TSI) with BEOL interconnect
Author :
Li, H.Y. ; Katti, Guruprasad ; Ding, Lixin ; Bhattacharya, Surya ; Lo, G.Q.
fYear :
2013
fDate :
11-13 Dec. 2013
Firstpage :
664
Lastpage :
668
Abstract :
The cost is always an important parameter for the new technical application. Through Si Via (TSV) technology becomes hot topic since image sensor application. We setup cost model according to our process flow and throughput for the cost study and reduction of 300mm TSI interposer. High cost area was calculated through the cost model. Full TSI process flow was separated as TSV, BEOL, Top UBM, TDDB, BSR, BS RDL& Bump sub-process flow. Top three high cost sub-process flow for 2.5D TSI with BEOL interconnect were identified from TSI process flow. Top three processes modules were isolated for each high cost subprocess flow. The high cost process modules were analyzed and explained in the paper. Two approaches were proposed for the cost reduction base on cost model analysis.
Keywords :
cost reduction; integrated circuit bonding; integrated circuit interconnections; three-dimensional integrated circuits; BEOL interconnect; BS RDL; BSR; TDDB; TSI; TSV; backside via revealing; bump subprocess flow; cost model analysis; cost reduction; process throughput; size 300 nm; temporary bonding debonding; through silicon interposer; through silicon via; top UBM; Fabrication; Metals; Silicon; Three-dimensional displays; Through-silicon vias; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-2832-3
Type :
conf
DOI :
10.1109/EPTC.2013.6745802
Filename :
6745802
Link To Document :
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