Title :
Large SOA insulated gate controlled thyristor (IGCT) with p-base clamp
Author :
Sakano, J. ; Kobayashi, H. ; Mori, M.
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
This paper presents the new concept of a p-base clamp, which remarkably improves the safe operating area (SOA) without sacrificing the low on-state voltage drop, for a MOS thyristor connecting a MOSFET and a thyristor in series. We demonstrate the effectiveness of this concept by using the experimental results from a 4 kV insulated gate controlled thyristor (IGCT) with a p-base clamp implemented by a Zener diode. The results show a very low on-state voltage drop of 3.75 V and a large SOA
Keywords :
MOS-controlled thyristors; Zener diodes; power MOSFET; semiconductor device testing; 3.75 V; 4 kV; IGCT; MOS thyristor; MOSFET-thyristor series connection; SOA; Zener diode; insulated gate controlled thyristor; on-state voltage drop; p-base clamp; safe operating area; Anodes; Breakdown voltage; Cathodes; Clamps; Diodes; Insulation; Low voltage; MOSFET circuits; Semiconductor optical amplifiers; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702658
