DocumentCode :
3364604
Title :
Growth habits and high temperature properties of langatate single crystal
Author :
Xiao-niu Tu ; Yan-qing Zheng ; Hai-kuan Kong ; Yi-fan Tu ; Kai-nan Xiong ; Er-wei Shi
Author_Institution :
Shanghai Inst. of Ceramics, Shanghai, China
fYear :
2012
fDate :
23-25 Nov. 2012
Firstpage :
289
Lastpage :
292
Abstract :
This paper shows that high quality LGT single crystals with the size of 2" were grown by Czochralski method along different direction. The facets and the solid-liquid interface during crystal growth process were investigated, and flat interface was obtained by adjusting the rotation rate. X-cut wafers were used to test frequency constant, resistivity, piezoelectric constant and crystalline perfection. The results indicate that frequency constant value was around 2.77 MHz·mm with a vitiation of 0.2% along the whole crystal; the resistivity of top part and bottom part both higher than 107 Ohm·cm at 500 °C; piezoelectric coefficient (d11) was 7.0 pC/N; diffraction angle is 22.3228° and the full width at half maximum (fwhm) value is 33.5 arcsec. In all, the LGT crystal was in high quality and high homogeneous, can be used to high temperature acoustic wave devices and sensors in applications.
Keywords :
crystal growth from melt; crystal structure; electrical resistivity; high-temperature effects; lanthanum compounds; piezoelectricity; Czochralski method; X-cut wafers; crystal growth process; diffraction angle; flat interface; full width at half maximum; high temperature acoustic wave devices; high temperature acoustic wave sensors; high-temperature properties; langatate single crystal; piezoelectric constant; resistivity; rotation rate; solid-liquid interface; temperature 500 degC; test frequency constant; Acoustic waves; Conductivity; Crystals; Diffraction; Temperature; Temperature sensors; Frequency; High temperature; Langatate; Resistivity; SPAWDA;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4814-0
Type :
conf
DOI :
10.1109/SPAWDA.2012.6464091
Filename :
6464091
Link To Document :
بازگشت