DocumentCode :
3364648
Title :
Theory on the laser excited wave propagation in a single piezoelectric plate under a bias electric field
Author :
Gen Chen ; Yong-dong Pan ; Zheng Zhong
Author_Institution :
Inst. of Acoust., Tongji Univ., Shanghai, China
fYear :
2012
fDate :
23-25 Nov. 2012
Firstpage :
298
Lastpage :
301
Abstract :
The laser excited wave propagation in a single piezoelectric plate under a bias electric field is studied theoretically. The state vector approach is used to derive the differential equations for the piezoelectric plate under a bias electric field. The laser is modeled as a transient force at the boundary. By solving the state space equation, both the dispersion curves and surface displacement of the epicenter of the single piezoelectric plate under the laser ablation excitation with bias electric field are obtained. It is found that the wave propagation in the piezoelectric is influenced by the bias electric field. The numerical calculation shows that along the polarization direction, the velocity of the acoustic wave in the piezoelectric plate with positive bias electric field is larger than that without any electric field, which is just an inversed situation in the negative configuration. The theoretical findings will provide the basis for the further experimental investigation.
Keywords :
acoustic wave velocity; dielectric polarisation; differential equations; laser ablation; piezoceramics; piezoelectricity; plates (structures); acoustic wave velocity; bias electric field; differential equations; dispersion curves; laser ablation excitation; laser excited wave propagation; numerical calculation; polarization direction; single piezoelectric plate; state space equation; state vector approach; surface displacement; transient force; Dispersion; Electric fields; Laser ablation; Laser excitation; Laser modes; Laser theory; Propagation; Active control; Bias field; Laser ultrasonics; Piezoelectric plate;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Piezoelectricity, Acoustic Waves and Device Applications (SPAWDA), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-4814-0
Type :
conf
DOI :
10.1109/SPAWDA.2012.6464093
Filename :
6464093
Link To Document :
بازگشت