Title :
Reproducibility in the fabrication of undoped semi-insulating InP
Author :
Uchida, M. ; Kainosho, K. ; Ohta, M. ; Oda, O.
Author_Institution :
Mater. & Components Labs., Japan Energy Corp., Saitama, Japan
Abstract :
Various annealing conditions for realizing the fabrication of undoped semi-insulating (SI) InP has been systematically studied in our laboratory for several years. In the present paper, these results are reported. It was found that by annealing at 950°C for 40 hrs under the phosphorus vapor pressure of 1 atm, the reproducible preparation of undoped SI InP can be achieved with the maximum number of 30 two-inch diameter wafers per batch. It was also found that a multiple-step wafer annealing (MWA) is very effective in improving the uniformity of electrical properties
Keywords :
III-V semiconductors; annealing; crystal growth from melt; indium compounds; semiconductor growth; 2 in; 40 h; 950 C; InP; LEC crystals; SI InP; annealing; annealing conditions; electrical properties; fabrication; multiple-step wafer annealing; phosphorus vapor pressure; reproducibility; two-inch diameter wafers; undoped semi-insulating InP; uniformity; Annealing; Atomic layer deposition; Conductivity; Fabrication; Indium phosphide; Iron; Laboratories; Photoluminescence; Reproducibility of results; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491929
