Title :
Calcium modified lead titanate thin films for pyroelectric applications
Author :
Wang, C.M. ; Chen, Y.C. ; Huang, Y.T. ; Kao, M.C.
Author_Institution :
Dept. of Electr. Eng., Wufeng Inst. of Technol., Chiayi, Taiwan
Abstract :
Calcium-modified lead titanate (PCT) thin film pyroelectric infrared (IR) detectors were fabricated on Pt(111)/SiO2/Si(100) substrates using a diol-based sol-gel process. The randomly oriented PCT thin film, which has not undergone the poling treatment, exhibits a relatively small dielectric constant and a large pyroelectric coefficient. The pyroelectric properties of PCT thin film point detectors with various Ca contents on modulation frequency are measured and compared. The optimized composition of PCT thin film IR detectors was found to be the PCT(25), which exhibits a large voltage responsivity of 4533 (V/W) at 20 Hz and a specific detectivity (D*) of 6.45 × 107 cmHz1/2/W at 100 Hz The results show that Pb1-xCaxTiO3 thin film with x = 0.25 [PCT(25)] was most suitable for application to the pyroelectric thin film IR detector
Keywords :
calcium compounds; ferroelectric materials; ferroelectric thin films; infrared detectors; lead compounds; permittivity; pyroelectric detectors; pyroelectricity; sol-gel processing; 100 Hz; 20 Hz; Ca content; IR detectors; PCT thin film point detectors; Pb1-xCaxTiO3; Pb1-xCaxTiO3 thin film; Pt(111)/SiO2/Si(100) substrates; Pt-SiO2-Si; Si; calcium modified lead titanate thin films; dielectric constant; diol-based sol-gel process; modulation frequency; pyroelectric applications; pyroelectric coefficient; pyroelectric infrared detectors; pyroelectric thin film IR detector; specific detectivity; voltage responsivity; Calcium; Dielectric constant; Dielectric substrates; Dielectric thin films; Frequency modulation; Infrared detectors; Lead; Pyroelectricity; Titanium compounds; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942433
