DocumentCode
3364845
Title
Electron irradiation effects in electrostrictive P(VDF-TrFE) copolymers
Author
Tang, Y.W. ; Zhao, X.-Z. ; Chan, Helen L.W. ; Choy, C.L.
Author_Institution
Dept. of Phys., Wuhan Univ., China
Volume
2
fYear
2000
fDate
2000
Firstpage
793
Abstract
Electrical field-induced strain response of electron-irradiated Poly(vinylidene fluoride trifluoroethylene) copolymer has been studied by a Mach-Zehnder type Heterodyne interferometer in the frequency range of 3 to 9 kHz. The electrostrictive constant is calculated from the strain results, which is of the same order of magnitude as those obtained at 1 Hz by a bimorph-based strain sensor, but at much lower electrical field. Changes in the piezoelectric coefficient, dielectric property and phase transition behavior of the same copolymer have been studied. The structural changes in the irradiated films were probed by means of differential scanning calorimetry, X-ray diffraction and IR spectra. The reversible solid-state transition between the polar and non-polar phase in the crystalline regions of the copolymer driven by the external electric field is suggested to be responsible for the significant high electrostrictive strain of the electron-irradiated copolymer
Keywords
Mach-Zehnder interferometers; X-ray diffraction; differential scanning calorimetry; electron beam effects; electrostriction; infrared spectra; piezoelectric materials; polymer blends; polymer films; solid-state phase transformations; 1 Hz; 3 to 9 kHz; IR spectra; Mach-Zehnder heterodyne interferometer; P(VDF-TrFE) copolymer film; X-ray diffraction; bimorph strain sensor; dielectric properties; differential scanning calorimetry; electron irradiation; electrostrictive constant; phase transition; piezoelectric coefficient; Calorimetry; Capacitive sensors; Dielectrics; Electrons; Electrostriction; Frequency; Infrared spectra; Piezoelectric films; Solid state circuits; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.942438
Filename
942438
Link To Document