DocumentCode
3364898
Title
Mitigation of mechanical fracture of polycrystalline silicon structure in MEMS capacitive microphones
Author
Tang Kum Cheong ; Cheam Daw Don
Author_Institution
Inst. of Microelectron., Agency for Sci., Technol. & Res. (A*STAR), Singapore, Singapore
fYear
2013
fDate
11-13 Dec. 2013
Firstpage
747
Lastpage
751
Abstract
Micro-machined capacitive microphones, currently well sought-after owing to increasing proliferation of handheld electronic devices, contain two parallel diaphragms that are made of thin-film polycrystalline silicon (polysilicon) - a relatively brittle material. Without sound process and fabrication controls, undesirable repercussions such as elevated production costs and unacceptable device yield levels may occur. This paper describes our experience in the microfabrication of capacitive microphones and proposed solution to minimize the risks of thin polysilicon diaphragms mechanical failure. We found the unintended presence of buried oxide keyholes beneath a polysilicon layer as the leading cause of thin-film rupture when the substrate was processed at elevated temperatures as part of downstream process procedures. We believe the keyholes were formed as a result of the “bread-loafing” effect and the reduction in keyhole size was verified as a contributing factor to minimizing the possibility of material rupture, which leads to better device yield.
Keywords
capacitive sensors; fracture; micromachining; microphones; microsensors; silicon; MEMS capacitive microphones; Si; bread-loafing effect; brittle material; buried oxide keyholes; downstream process procedures; handheld electronic devices; mechanical fracture; microfabrication; micromachined capacitive microphones; parallel diaphragms; polycrystalline silicon structure; thin polysilicon diaphragms; thin-film polycrystalline silicon; thin-film rupture; Capacitance; Fabrication; Micromechanical devices; Microphones; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location
Singapore
Print_ISBN
978-1-4799-2832-3
Type
conf
DOI
10.1109/EPTC.2013.6745820
Filename
6745820
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