A 60GHz transmitter in 0.18mu m Silicon Germanium

Author

Boers, Michael ; Parker, Anthony ; Weste, Neil

Author_Institution

Macquarie Univ., Sydney

fYear

2007

fDate

27-30 Aug. 2007

Firstpage

36

Lastpage

36

Abstract

Simulated results for a silicon germanium transmitter operating at 60 GHz are presented. The super-heterodyne transmitter is based on a moving IF architecture with two up-conversion stages. The transmitter includes a baseband to 12 GHz image- reject mixer, a 12 to 60 GHz Gilbert-cell mixer, a passive balun and a power amplifier capable of greater than 13 dBm saturated output power. All bias voltages are tuneable using a 3-wire serial interface connected to 4-bit DAC´s. Also on-chip is a frequency synthesizer that supplies the LO to both mixers and locks the on-chip 24 GHz VCO to an external source.

Keywords

Ge-Si alloys; radio transmitters; semiconductor materials; submillimetre wave amplifiers; submillimetre wave mixers; submillimetre wave oscillators; voltage-controlled oscillators; 3-wire serial interface; DAC; Gilbert-cell mixer; IF architecture; SiGe; frequency 60 GHz; image-reject mixer; on-chip VCO; passive balun; power amplifier; silicon germanium; super-heterodyne transmitter; Baseband; Frequency synthesizers; Germanium silicon alloys; Impedance matching; Power amplifiers; Power generation; Silicon germanium; Transmitters; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Broadband and Ultra Wideband Communications, 2007. AusWireless 2007. The 2nd International Conference on

Conference_Location

Sydney, NSW

Print_ISBN

978-0-7695-2846-5

Electronic_ISBN

978-0-7695-2846-5

Type

conf

DOI

10.1109/AUSWIRELESS.2007.4

Filename

4299685