Analysis of MCCT´s turn-on and short circuit operation

Author

Iwaana, Tadayoshi ; Iwamuro, Noriyuki ; Harada, Yuichi ; Onozawa, Yuichi ; Seki, Yasukazu

Author_Institution

Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

fYear

1998

fDate

3-6 Jun 1998

Firstpage

163

Lastpage

166

Abstract

The turn-on characteristic and oscillation waveform in the short circuit test of a 1200 V MOS controlled cascode thyristor (MCCT) are described for the first time. A smaller turn-on loss can be successfully achieved in the MCCT than that of an IGBT which was fabricated using the same epitaxial wafer with the MCCT. In the MCCT, the oscillation waveform in the short circuit test takes place for the whole duration. However, a smaller optimized gate capacitance successfully achieves elimination of the oscillation without degradation of the electrical characteristics

Keywords

MOS-controlled thyristors; capacitance; losses; oscillations; semiconductor device testing; transient analysis; 1200 V; IGBT; MCCT short circuit operation; MCCT turn-on; MOS controlled cascode thyristor; electrical characteristics; epitaxial wafer; optimized gate capacitance; oscillation elimination; oscillation waveform; short circuit test; turn-on characteristic; turn-on loss; Anodes; Cathodes; Circuit testing; Insulated gate bipolar transistors; Laboratories; Low voltage; MOSFET circuits; Threshold voltage; Thyristors; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on

Conference_Location

Kyoto

ISSN

1063-6854

Print_ISBN

0-7803-4752-8

Type

conf

DOI

10.1109/ISPSD.1998.702660

Filename

702660