• DocumentCode
    3365063
  • Title

    Sputtered barium titanate and barium strontium titanate films for capacitor applications

  • Author

    Tsao, Bang-Hung ; Heidger, Susan ; Weimer, Joseph A.

  • Author_Institution
    Res. Inst., Dayton Univ., OH, USA
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    837
  • Abstract
    Thin barium titanate and barium strontium titanate films are being developed as dielectric film for use in dc-dc converters. Thin BaTiO3 (BT) and (BaSr)TiO3 (BST) film capacitor devices were fabricated using RF magnetron sputtering techniques. The typical dielectric constant of these film capacitors was in the range of 300 to 690. These film capacitors had dissipation factors between 0.2% to 0.6% before annealing. The film capacitors have breakdown voltages in the range of 1×105 to 1.2×106 V/cm. The resistivity was in the range of 1013 to 1014 ohm-cm. Annealing significantly increased the value of the dielectric constant. Annealing also increased the value of the dissipation factors up to 2%. The capacitance of these films had little dependence on frequency from 400 Hz to 100 kHz. Thermal cycling in the temperature range of 50 to 300°C had very limited impact on the capacitance and dissipation factor. Measurements of dielectric and material properties are reported
  • Keywords
    annealing; barium compounds; dielectric thin films; electric breakdown; electrical resistivity; permittivity; sputtered coatings; strontium compounds; thin film capacitors; (BaSr)TiO3; 400 Hz to 100 kHz; 50 to 300 C; BaTiO3; DC-DC converter; RF magnetron sputtering; annealing; barium strontium titanate; barium titanate; breakdown voltage; capacitance; dielectric constant; dielectric properties; dissipation factor; electrical resistivity; thermal cycling; thin film capacitor; Annealing; Barium; Capacitance; Capacitors; DC-DC power converters; Dielectric constant; Dielectric films; Dielectric thin films; Strontium; Titanium compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-5940-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2000.942448
  • Filename
    942448