DocumentCode
3365063
Title
Sputtered barium titanate and barium strontium titanate films for capacitor applications
Author
Tsao, Bang-Hung ; Heidger, Susan ; Weimer, Joseph A.
Author_Institution
Res. Inst., Dayton Univ., OH, USA
Volume
2
fYear
2000
fDate
2000
Firstpage
837
Abstract
Thin barium titanate and barium strontium titanate films are being developed as dielectric film for use in dc-dc converters. Thin BaTiO3 (BT) and (BaSr)TiO3 (BST) film capacitor devices were fabricated using RF magnetron sputtering techniques. The typical dielectric constant of these film capacitors was in the range of 300 to 690. These film capacitors had dissipation factors between 0.2% to 0.6% before annealing. The film capacitors have breakdown voltages in the range of 1×105 to 1.2×106 V/cm. The resistivity was in the range of 1013 to 1014 ohm-cm. Annealing significantly increased the value of the dielectric constant. Annealing also increased the value of the dissipation factors up to 2%. The capacitance of these films had little dependence on frequency from 400 Hz to 100 kHz. Thermal cycling in the temperature range of 50 to 300°C had very limited impact on the capacitance and dissipation factor. Measurements of dielectric and material properties are reported
Keywords
annealing; barium compounds; dielectric thin films; electric breakdown; electrical resistivity; permittivity; sputtered coatings; strontium compounds; thin film capacitors; (BaSr)TiO3; 400 Hz to 100 kHz; 50 to 300 C; BaTiO3; DC-DC converter; RF magnetron sputtering; annealing; barium strontium titanate; barium titanate; breakdown voltage; capacitance; dielectric constant; dielectric properties; dissipation factor; electrical resistivity; thermal cycling; thin film capacitor; Annealing; Barium; Capacitance; Capacitors; DC-DC power converters; Dielectric constant; Dielectric films; Dielectric thin films; Strontium; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.942448
Filename
942448
Link To Document