Title :
Dielectric properties of Ba-Ti-O thin films prepared by MOCVD
Author :
Masumoto, H. ; Tohma, T. ; Goto, T. ; Smirnova, T. ; Masuda, Y. ; Hirai, T.
Author_Institution :
Inst. of Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
BaTO3 films were deposited by MOCVD at temperature of 973 K and total pressure of 0.2 to 0.8 kPa on Pt-coated fused silica and (100)MgO substrates. Ba(DPM)2 and Ti(O-i-C3H7 )2(DPM)2 were used as Ba and Ti sources, respectively. BaTiO3 films in single phase were obtained when the films were deposited at 973 K and Ba/Ti ratio of 0.25 to 0.35. The grain size of BaTiO3 films increased with decreasing total pressure. BaTiO3 polycrystalline films with thickness of 1 μm had dielectric constant of 480, loss tangent of 0.03 and electrical resistivity of 2.1 MΩm at room temperature
Keywords :
MOCVD coatings; barium compounds; dielectric losses; electrical resistivity; ferroelectric thin films; grain size; permittivity; 0.2 to 0.8 kPa; 973 K; BaTO3; BaTiO3 ferroelectric thin film; MOCVD; MgO(100) substrate; Pt-coated fused silica substrate; dielectric constant; dielectric properties; electrical resistivity; grain size; loss tangent; polycrystalline phase; Barium; Chemicals; Dielectric substrates; Dielectric thin films; Ferroelectric films; Ferroelectric materials; MOCVD; Silicon compounds; Sputtering; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942449
