Title :
Transport in split gate MOS quantum dot structures
Author :
Goodnice, S.M. ; Bird, J. ; Ferry, D.K. ; Gunther, A.D. ; Khoury, M.D. ; Kozicki, M. ; Rack, M.J. ; Thornton, T.J. ; Vasileska-Kafedezka, D.
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
Abstract :
A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another
Keywords :
MOSFET; elemental semiconductors; inversion layers; semiconductor quantum dots; silicon; single electron transistors; 40 to 200 nm; Si; conductance peaks; controllable electron number; energy level; input barriers; output barriers; quantum dot structures; side gates; split gate MOSFET; top gates; Chromium; Electrons; Fabrication; Geometry; Performance evaluation; Quantum dots; Semiconductor devices; Tunneling; US Department of Transportation; Voltage;
Conference_Titel :
VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on
Conference_Location :
Ypsilanti, MI
Print_ISBN :
0-7695-0104-4
DOI :
10.1109/GLSV.1999.757466
