Transport in split gate MOS quantum dot structures

Author

Goodnice, S.M. ; Bird, J. ; Ferry, D.K. ; Gunther, A.D. ; Khoury, M.D. ; Kozicki, M. ; Rack, M.J. ; Thornton, T.J. ; Vasileska-Kafedezka, D.

Author_Institution

Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA

fYear

1999

fDate

4-6 Mar 1999

Firstpage

394

Lastpage

396

Abstract

A novel technique has been developed for the fabrication of Si quantum dot structures with controllable electron number through both top and side gates. We have tested devices ranging in size from 40 to 200 nm. By varying the density with the top gate, and controlling the input and output barriers of the dot with the side gates, conductance peaks are observed which map details of the energy level within the dot as well as the interaction of the electrons with one another

Keywords

MOSFET; elemental semiconductors; inversion layers; semiconductor quantum dots; silicon; single electron transistors; 40 to 200 nm; Si; conductance peaks; controllable electron number; energy level; input barriers; output barriers; quantum dot structures; side gates; split gate MOSFET; top gates; Chromium; Electrons; Fabrication; Geometry; Performance evaluation; Quantum dots; Semiconductor devices; Tunneling; US Department of Transportation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI, 1999. Proceedings. Ninth Great Lakes Symposium on

Conference_Location

Ypsilanti, MI

ISSN

1066-1395

Print_ISBN

0-7695-0104-4

Type

conf

DOI

10.1109/GLSV.1999.757466

Filename

757466