Integration and optimization of 300 mm backside TSV revealing and Cu redistribution process enabled by ZoneBOND temporary bonding technology

Author

Guan Kian Lau ; Ding, Lixin ; Tupaen, Hipona Randy ; Lo, G.Q.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2013

fDate

11-13 Dec. 2013

Firstpage

793

Lastpage

798

Abstract

In this paper, we investigated the integrity and compatibility of various temporary adhesives using ZoneBOND technology for 3D TSV integration. Optimization of 300 mm TSV revealing and subsequent backside process have been investigated, including the temporary bonding, wafer thinning, Si recess etching, backside passivation, wafer planarization, backside Cu redistribution layer (RDL), and solder bumping fabrication.

Keywords

adhesives; copper; elemental semiconductors; optimisation; silicon; three-dimensional integrated circuits; wafer bonding; 3D TSV integration; Cu; RDL; Si; Si recess etching; TSV revealing; ZoneBOND technology; backside Cu redistribution layer; backside passivation; backside process; optimization; size 300 mm; solder bumping fabrication; temporary adhesives; temporary bonding; wafer planarization; wafer thinning; Bonding; Etching; Films; Passivation; Silicon; Through-silicon vias;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th

Conference_Location

Singapore

Print_ISBN

978-1-4799-2832-3

Type

conf

DOI

10.1109/EPTC.2013.6745830

Filename

6745830