DocumentCode :
3365163
Title :
Integration and optimization of 300 mm backside TSV revealing and Cu redistribution process enabled by ZoneBOND temporary bonding technology
Author :
Guan Kian Lau ; Ding, Lixin ; Tupaen, Hipona Randy ; Lo, G.Q.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
fYear :
2013
fDate :
11-13 Dec. 2013
Firstpage :
793
Lastpage :
798
Abstract :
In this paper, we investigated the integrity and compatibility of various temporary adhesives using ZoneBOND technology for 3D TSV integration. Optimization of 300 mm TSV revealing and subsequent backside process have been investigated, including the temporary bonding, wafer thinning, Si recess etching, backside passivation, wafer planarization, backside Cu redistribution layer (RDL), and solder bumping fabrication.
Keywords :
adhesives; copper; elemental semiconductors; optimisation; silicon; three-dimensional integrated circuits; wafer bonding; 3D TSV integration; Cu; RDL; Si; Si recess etching; TSV revealing; ZoneBOND technology; backside Cu redistribution layer; backside passivation; backside process; optimization; size 300 mm; solder bumping fabrication; temporary adhesives; temporary bonding; wafer planarization; wafer thinning; Bonding; Etching; Films; Passivation; Silicon; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronics Packaging Technology Conference (EPTC 2013), 2013 IEEE 15th
Conference_Location :
Singapore
Print_ISBN :
978-1-4799-2832-3
Type :
conf
DOI :
10.1109/EPTC.2013.6745830
Filename :
6745830
Link To Document :
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