Title :
A model for rapid synthesis of large volume InP melts
Author :
Iseler, G. ; Anselmo, A.P. ; Bliss, D.F. ; Bryant, G. ; Lancto, R.
Author_Institution :
Rome Lab., Hanscom AFB, MA, USA
Abstract :
The rapid synthesis of InP is routinely carried out in our laboratory by subliming phosphorus into encapsulated liquid In. We have constructed the first model of this process by considering the equilibrium vapor pressure over red phosphorus as its temperature increases, and that over In(1-x)Px as its phosphorus content increases
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; semiconductor growth; semiconductor process modelling; sublimation; vapour pressure; In; In(1-x)Px; InP; P; encapsulated liquid In; equilibrium vapor pressure; large volume InP melts; model; phosphorus content; rapid synthesis; red phosphorus; sublimation; temperature increase; Control system synthesis; Indium phosphide; Laboratories; Large-scale systems; Power generation; Radio frequency; Semiconductor device modeling; Solid modeling; Solid state circuits; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on
Conference_Location :
Schwabisch-Gmund
Print_ISBN :
0-7803-3283-0
DOI :
10.1109/ICIPRM.1996.491931
