Title :
Growth of sputtered AlN thin film on glass in room temperature
Author :
Lee, C.K. ; Placido, F. ; Cochran, S. ; Kirk, K.J.
Author_Institution :
Sch. of Inf. & Commun. Technol., Univ. of Paisley, UK
Abstract :
Highly [002] oriented AlN thin film is deposited on glass substrate by RF magnetron sputtering method. The X-ray diffraction shows that the AlN thin film has grown in a preferred [002] orientation but other orientation starts to build up as the thickness increases. The surface morphology of the c-axis texture of the AlN thin film is obtained by scanning electron microscopy. The d33 coefficient of the AlN thin film is measured using piezoresponse microscopy and the result obtained is 3.8pm/V.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; scanning electron microscopy; semiconductor growth; sputter deposition; texture; wide band gap semiconductors; 20 C; AlN; RF magnetron sputtering method; X-ray diffraction; c-axis texture; d33 coefficient; glass; glass substrate; highly [002] oriented AlN thin film; piezoresponse microscopy; preferred [002] orientation; room temperature; scanning electron microscopy; sputtered AlN thin film; surface morphology; Glass; Radio frequency; Scanning electron microscopy; Sputtering; Substrates; Surface morphology; Surface texture; Temperature; Transistors; X-ray diffraction;
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
Print_ISBN :
0-7803-7582-3
DOI :
10.1109/ULTSYM.2002.1192490
