Title :
Mobility and reliability improvements of fluorinated gate oxide for VLSI technology
Author :
Vishnubhotla, L. ; Balasinski, A. ; Wang, X.W. ; Ma, T.P. ; Tseng, H.-H. ; Tobin, P.J.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
31 May-2 Jun 1995
Abstract :
By incorporating appropriate quantities of fluorine into the gate SiO2, we achieved improvement in channel mobility as well as transconductance of both nand p-channel submicron LDD MOSFETs for gate fields from 0.7 to 3 MV/cm, and increased their lifetimes based on hot-carrier stress tests. Possible mechanisms are briefly discussed
Keywords :
CMOS integrated circuits; MOSFET; VLSI; carrier mobility; hot carriers; integrated circuit reliability; integrated circuit technology; life testing; SiO2; VLSI technology; channel mobility; fluorinated gate oxide; gate fields; hot-carrier stress tests; n-channel devices; p-channel devices; reliability improvements; submicron LDD MOSFETs; transconductance; CMOSFETs; Charge pumps; Electric breakdown; Hot carriers; MOS devices; MOSFETs; Microelectronics; Stress; Transconductance; Very large scale integration;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524631
