Title :
Magnetron sputtered Ba(1-x)SrxTiO3 thin films
Author :
Cukauskas, E.J. ; Kirchoefer, S.W. ; Pond, J.M.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Thin films of Ba(1-x)SrxTiO3 (BST) have been deposited by inverted cylindrical magnetron (ICM) and off-axis cosputtering at high sputter gas pressures. The ICM technique uses a single BST target and the off-axis technique uses BaTiO3 and SrTiO3 targets. Films were deposited at gas pressures ranging from 6.7 to 53 Pa and at substrate temperatures from 550 to 800°C. By combining high gas pressures with unconventional geometries the negative ion bombardment of the growing film, characteristic of oxide film growth, has been minimized. This results in well oxygenated stoichiometric BST films. The surface morphology and grain structure were investigated and related to the measured microwave properties. The films had lattice parameters dependent on deposition conditions. Grain sizes were approximately 0.25 μm for most films after an oxygen anneal at 780°C. Both techniques have yielded films having Q > 1000 with tuning of nearly 7%
Keywords :
Curie temperature; Q-factor; barium compounds; dielectric losses; ferroelectric capacitors; ferroelectric thin films; grain size; lattice constants; sputter deposition; strontium compounds; 0.25 micron; 550 to 800 degC; 6.7 to 53 Pa; Ba(1-x)SrxTiO3; Ba(1-x)SrxTiO3; Curie temperature; Q factor; deposition conditions; deposition parameters; dielectric characteristics; dielectric loss; grain structure; inverted cylindrical magnetron sputtering; lattice parameters; microwave properties; negative ion bombardment; off-axis sputtering; perovskite ferroelectric; sputter gas pressures; substrate temperatures; surface morphology; Binary search trees; Geometry; Grain size; Lattices; Microwave measurements; Sputtering; Strontium; Substrates; Surface morphology; Temperature distribution;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942457
