Title :
New silicon-based ferroelectric sandwich structure
Author :
Tian-Ling, Ren ; Lin-Tao, Zhang ; Li-Tian, Liu ; Zhi-Jian, Li
Author_Institution :
Inst. of Microelectron., Tsinghua Univ., Beijing, China
Abstract :
A new silicon-based PbTiO3/Pb(Zr,Ti)O3/PbTiO 3 (PT/PZT/PT) sandwich structure is prepared using a sol-gel method. The annealing temperature is greatly reduced compared with that without PT layers. Capacitance-voltage (C-V), current density - electric field (J-E), polarization-field (P-E) and dielectric-frequency responses of the sandwich structure are studied. The maximum dielectric constant of about 900 is obtained at the coercive field 18 kV/cm, and the remnant polarization is 16 μC/cm2. The current density is 5 × 10-9 A/cm2 below 200 KV/cm. The dielectric constant of the structure stays constant at low frequency, and decreases to some degree at high frequency. The PZT films are proved to have very good dielectric and ferroelectric properties. The PT/PZT/PT sandwich structure will have a use in memory devices and other applications
Keywords :
annealing; capacitance; current density; dielectric polarisation; ferroelectric materials; lead compounds; permittivity; sol-gel processing; PT/PZT/PT sandwich structure; PZT; PZT films; PbTiO3-Pb(ZrTi)O3-PbTiO3; PbTiO3/Pb(ZrTi)O3/PbTiO3; PbZrO3TiO3; annealing temperature; capacitance-voltage response; coercive field; current density; current density-electric field response; dielectric constant; dielectric properties; dielectric-frequency response; ferroelectric properties; maximum dielectric constant; memory devices; polarization-field response; remnant polarization; silicon-based ferroelectric sandwich structure; sol-gel method; Annealing; Capacitance-voltage characteristics; Current density; Dielectric constant; Ferroelectric films; Ferroelectric materials; Frequency; Polarization; Sandwich structures; Temperature;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942458
