TID sensitivity of NAND Flash memory building blocks

NAND Flash memories are the leader among high capacity non-volatile memory technologies and are becoming attractive also for radiation harsh environments, such as space. For these applications, a careful assessment of their sensitivity to radiation is needed. In this contribution we analyze TID effects on the many different building blocks of NAND Flash memories, including the charge pumps, row-decoder, and floating gate array. Since each of these elements have dedicated circuital and technological characteristics, we identify and study the peculiar failure mode for each part.