Resonant nonlinearities in quantum wells for ultrafast all-optical switching applications

Author

LiKamWa, Patrick ; Kan´an, A. ; Pamulapati, Jagadeesh

Author_Institution

Center for Res. in Electro-Opt. & Lasers, Univ. of Central Florida, Orlando, FL, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

190

Abstract

Ultrafast all-optical switch-on and switch-off of GaAs-AlGaAs MQW waveguide devices that employ carrier induced nonlinearities in quantum wells is reported 2 ps consecutive all-optical switching due to the optical Stark effect has also been observed

Keywords

III-V semiconductors; Stark effect; aluminium compounds; gallium arsenide; high-speed optical techniques; nonlinear optics; optical switches; optical waveguides; semiconductor quantum wells; 2 ps; GaAs-AlGaAs; GaAs-AlGaAs MQW waveguide devices; carrier induced nonlinearities; optical Stark effect; ps consecutive all-optical switching; quantum wells; resonant nonlinearities; ultrafast all-optical switch-off; ultrafast all-optical switch-on; ultrafast all-optical switching applications; Fiber nonlinear optics; Laser beams; Nonlinear optics; Optical pulses; Optical waveguides; Quantum well devices; Resonance; Stark effect; Switches; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630580

Filename

630580