Title :
600 V-GTBT with high current gains
Author :
Murakami, Yoshinori ; Hayashi, Tetsuya ; Nakajima, Yasushi ; Shimoida, Yoshio ; Shinohara, Toshiro
Author_Institution :
Nissan Motor Co. Ltd., Yokosuka, Japan
Abstract :
The GTBT, a grounded-trench-MOS structure assisted bipolar-mode transistor, with 600 V-class VDSS and a current gain of 100 at 100 A/cm2 drain current density has been achieved by structural improvements. This value is 3.5 times as high as the previous value (Murakami et al, 1996). This paper discusses the relationships between the structural parameters of the GTBT and its current gain theoretically, and reports experimental results
Keywords :
current density; isolation technology; power MOSFET; power bipolar transistors; semiconductor device models; semiconductor device testing; 600 V; GTBT; GTBT structural parameters; current gain; drain current density; grounded-trench-MOS structure assisted bipolar-mode transistor; Current density; Electrodes; Equations; FETs; Information systems; Insulation; Laboratories; Structural engineering; Temperature; Transistors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702662
