Title :
Electrical properties of PZT thin films on Al-Ti electrodes
Author :
Blanco, O. ; Heiras, J.L. ; Siqueiros, J.M.
Author_Institution :
CICESE, Univ. Nacional Autonoma de Mexico, Mexico City, Mexico
Abstract :
Pb(Zr0.53Ti0.47)O3 thin films, with the morphotropic phase boundary (MPB) composition, were successfully grown on (111) silicon substrates by a high oxygen pressure RF sputtering technique, which is used for the preparation of HTS thin films. Underlayers of Ti and Al were evaporated on the (111) oxidized Si wafers and then subjected to an annealing process before the ferroelectric thin film was deposited. The best structural characteristics were found for the annealing temperature of 600°C and a deposition temperature of 450°C. For these conditions a perovskite structure with (011) and (110) preferential orientations was obtained. The films show a peak in the dielectric constant at 380°C, near the Curie temperature for PZT in the MPB composition, and a slim hysteresis loop with Pr ≈ 2 μC/cm2 and Ec ≈ 25 kV/cm at 3V
Keywords :
aluminium alloys; annealing; dielectric hysteresis; electrodes; ferroelectric Curie temperature; ferroelectric thin films; lead compounds; permittivity; sputtered coatings; titanium alloys; (111) silicon substrate; 3 V; 450 C; 600 C; Al-Ti; Al-Ti electrode; Curie temperature; PZT; PZT ferroelectric thin film; PbZrO3TiO3; RF sputtering; Si; annealing; dielectric constant; electrical properties; hysteresis loop; morphotropic phase boundary; perovskite phase; preferential orientation; structural characteristics; Annealing; Electrodes; Ferroelectric materials; High temperature superconductors; Radio frequency; Semiconductor thin films; Silicon; Sputtering; Substrates; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942460
