Title :
0.5SrTiO3-0.5PbTiO3 thin films by rf-sputtering on Pt/TiNx, RuO/TiNx and TiNx electrodes
Author :
Martínez, Eduardo ; Fundora, Abel ; Siqueiros, Jesús M.
Author_Institution :
Centro de Investigacion Cientifica y de Educacion Superior de Ensenada, Mexico
Abstract :
A novel ferroelectric thin film system denoted by xSrTiO3 -(1-x)PbTiO3 (SPT) is studied. In this work we report results on the composition 0.5SrTiO3-0.5PbTiO3 (SPT5) only. For this investigation, SPT5 thin films were deposited at different temperatures (500, 550, 600 and 650°C) by argon/oxygen ion rf sputtering on Pt/TiNx/SiO2/Si, RuOx/TiNx/SiO2/Si and TiNx/SiO2/Si substrates at different relative concentrations of argon and oxygen (Ar/O = 100/0, 50/50, 0/100). The polycrystalline xSrTiO3-(1-x)PbTiO3 perovskite phase formation is confirmed by x-ray diffraction (XRD) analysis and the growth dynamics is studied by scanning electron microscopy (SEM). The nature of the SPT5 layer-electrode interface is also analyzed by this technique. The microstructural features of the SPT5 thin films on Pt/TiN x/SiO2/Si, RuOx/TiNx/SiO2/Si and TiNx/SiO2/Si substrates obtained by SEM were correlated to the deposit conditions
Keywords :
X-ray diffraction; ferroelectric thin films; lead compounds; scanning electron microscopy; sputtered coatings; strontium compounds; 500 to 650 C; Pt-TiN-SiO2-Si; Pt/TiNx electrode; RF sputtering; RuO-TiN-SiO2-Si; RuO/TiNx electrode; SPT layer-electrode interface; SiO2/Si substrate; SrTiO3-PbTiO3; SrTiO3-PbTiO3 ferroelectric thin film; TiN-SiO2-Si; TiNx electrode; X-ray diffraction; growth dynamics; microstructure; polycrystalline perovskite phase; scanning electron microscopy; Argon; Ferroelectric materials; Scanning electron microscopy; Semiconductor thin films; Sputtering; Substrates; Temperature; Tin; Transistors; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942461
