Title :
Ultra-thin silicon nitride films on Si by jet vapor deposition
Author :
Wang, X.W. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Halpern, B.L. ; Schmitt, J.J.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
fDate :
31 May-2 Jun 1995
Abstract :
Ultra-thin silicon nitride films (with equivalent oxide thicknesses ⩽4 nm) have been successfully deposited directly on silicon substrates at room temperature using jet vapor deposition technique. These ultra-thin silicon nitride films exhibit excellent C-V and I-V characteristics, high electrical breakdown strength, low leakage current, and low densities of bulk and interface traps. These properties make JVD silicon nitride a very attractive candidate to extend the scaling limit of the gate dielectric below 4 nm of equivalent oxide thickness
Keywords :
MIS capacitors; dielectric thin films; electric breakdown; electron traps; elemental semiconductors; leakage currents; silicon; silicon compounds; vapour deposition; 4 nm; C-V characteristics; I-V characteristics; MNS capacitors; SiN-Si; electrical breakdown strength; equivalent oxide thicknesses; gate dielectric; interface traps; jet vapor deposition; leakage current; scaling limit; Atomic force microscopy; Atomic layer deposition; Capacitance-voltage characteristics; Chemical vapor deposition; Dielectric thin films; Leakage current; Semiconductor films; Silicon; Substrates; Temperature;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on
Conference_Location :
Taipei
Print_ISBN :
0-7803-2773-X
DOI :
10.1109/VTSA.1995.524632
