Ultra-thin silicon nitride films on Si by jet vapor deposition

Author

Wang, X.W. ; Ma, T.P. ; Cui, G.J. ; Tamagawa, T. ; Halpern, B.L. ; Schmitt, J.J.

Author_Institution

Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA

fYear

1995

fDate

31 May-2 Jun 1995

Firstpage

49

Lastpage

52

Abstract

Ultra-thin silicon nitride films (with equivalent oxide thicknesses ⩽4 nm) have been successfully deposited directly on silicon substrates at room temperature using jet vapor deposition technique. These ultra-thin silicon nitride films exhibit excellent C-V and I-V characteristics, high electrical breakdown strength, low leakage current, and low densities of bulk and interface traps. These properties make JVD silicon nitride a very attractive candidate to extend the scaling limit of the gate dielectric below 4 nm of equivalent oxide thickness

Keywords

MIS capacitors; dielectric thin films; electric breakdown; electron traps; elemental semiconductors; leakage currents; silicon; silicon compounds; vapour deposition; 4 nm; C-V characteristics; I-V characteristics; MNS capacitors; SiN-Si; electrical breakdown strength; equivalent oxide thicknesses; gate dielectric; interface traps; jet vapor deposition; leakage current; scaling limit; Atomic force microscopy; Atomic layer deposition; Capacitance-voltage characteristics; Chemical vapor deposition; Dielectric thin films; Leakage current; Semiconductor films; Silicon; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems, and Applications, 1995. Proceedings of Technical Papers. 1995 International Symposium on

Conference_Location

Taipei

ISSN

1524-766X

Print_ISBN

0-7803-2773-X

Type

conf

DOI

10.1109/VTSA.1995.524632

Filename

524632