Title :
Ferroelectric properties of face-to-face annealed Sr0.8BixTa2O9 thin films
Author :
Aizawa, K. ; Iizuka, K. ; Tokumitsu, E. ; Ishikwara, H.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
Abstract :
Ferroelectric and insulating properties of sol-gel-derived and face-to-face annealed strontium bismuth tantalate (SBT) thin films were investigated, in which the precursor solutions in the form of Sr0.8 BixTa2O9 were used and the x-value was changed from 2.0 to 2.4. The remanent polarization (2Pr) showed the maximum value at the Bi composition of 2.3. At this Bi composition, the 2Pr value of a face-to-face annealed SBT film crystallized at 750°C was as large as 19.8 μC/cm2, while it was 16.7 μC/cm2 in a film without face-to-face annealing. It was also found from the time dependence of leakage current density that the minimum leakage current density of the face-to-face annealed SBT films at the Bi composition of 2.3 was lower than 1 nA/cm 2 at the electric field of 130 kV/cm
Keywords :
annealing; barium compounds; ferroelectric thin films; leakage currents; sol-gel processing; strontium compounds; 750 C; SBT thin film; Sr0.8BixTa2O9; face-to-face annealing; ferroelectric properties; insulating properties; leakage current density; remanent polarization; sol-gel synthesis; Annealing; Bismuth; Crystallization; Ferroelectric films; Ferroelectric materials; Insulation; Polarization; Strontium; Substrates; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942463
