Title :
Domain structure and residual-strain characterization of epitaxial Pb(ZrxTi1-x)O3 thin films
Author :
Saito, K. ; Yamaji, I. ; Akai, T. ; Aratani, M. ; Nagashima, K. ; Funakubo, H.
Author_Institution :
Application Lab., Philips Japan Ltd, Kanagawa, Japan
Abstract :
Epitaxially grown (001), (101) and (111)-oriented tetragonal Pb(Zr xTi1-x)O3 (PZT) thin films were prepared on (001), (110) and (111) SrTiO3 substrates, respectively Growth domain configuration and lattice parameters were characterized using high resolution X-ray reciprocal space mapping measurement. In (001)-oriented PZT case, well-known c-domain and a-domain were observed. In other orientation case, (101) mixed with (110)-oriented PZT and (111) with small angle tilt orientation were observed for (110) and (111) SrTiO3 substrates, respectively. Moreover, lattice parameters characterization showed almost fully growth strain relaxation at room temperature
Keywords :
X-ray diffraction; electric domains; epitaxial layers; ferroelectric thin films; internal stresses; lattice constants; lead compounds; piezoelectric thin films; stress relaxation; 300 K; PZT; PbZrO3TiO3; SrTiO3; SrTiO3 substrates; domain structure; epitaxial Pb(ZrxTi1-x)O3 thin films; growth domain configuration; growth strain relaxation; high resolution X-ray reciprocal space mapping measurement; lattice parameters; residual-strain characterization; room temperature; small angle tilt orientation; Epitaxial growth; Ferroelectric materials; Lattices; Polarization; Space technology; Substrates; Temperature; Transistors; X-ray diffraction; Zirconium;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942466
