DocumentCode
3365547
Title
Preparation of lead titanate and PZT ultra-thin film using Langmuir-Blodgett film as precursor
Author
Sugai, Hiroshi ; Ijima, T. ; Masumoto, Hiroshi
Author_Institution
Res. Inst. for Electr. & Magnetic Mater., Miyagi, Japan
Volume
2
fYear
2000
fDate
2000
Firstpage
917
Abstract
The Langmuir-Blodgett (LB) method was investigated as a process in the fabrication of ultra-thin films of oxides such as lead titanate (PT) and lead zirconate titanate (PZT). An X-ray diffraction pattern of the thin film indicated a well-defined perovskite structure. Moreover, the results demonstrate potential application of LB deposition for controlling crystallographic orientation of thin films
Keywords
Langmuir-Blodgett films; X-ray diffraction; ferroelectric thin films; lead compounds; LB deposition; Langmuir-Blodgett film precursor; PZT; PbTiO3; PbZrO3TiO3; X-ray diffraction pattern; crystallographic orientation; fabrication; lead titanate; oxides; perovskite structure; preparation; ultra-thin film; Fabrication; Ferroelectric films; Lead compounds; Magnetic films; Magnetic materials; Sputtering; Thin film sensors; Titanium compounds; Transistors; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location
Honolulu, HI
ISSN
1099-4734
Print_ISBN
0-7803-5940-2
Type
conf
DOI
10.1109/ISAF.2000.942467
Filename
942467
Link To Document