Title :
Low temperature preparation of sol-gel PZT thin film annealed at 160°C by hydrothermal method
Author :
Wei, Zhiqiang ; Yamashita, Kaoru ; Masanori, O.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
Abstract :
Pb(Zr0.52TiO0.48)O3 (PZT) thin films have been deposited on Pt/Ti/SiO2/Si substrate by sol-gel method with pre-baking at 300°C, and then successfully crystallized at low temperature of 160°C by hydrothermal annealing in mixture solution of KOH and Pb(OH)2. Hydrothermally-annealed PZT films show good crystallinity with pure perovskite phase and are oriented to (111). The surface and cross section observed by SEM show granulated structure of grain size of about 100 nm. The electric properties of the samples before post-baking and after post-baking were measured. The sample after post-baking shows good hysteresis loop with Pr=26.3 μm/cm2 and Ec=40.1 kV/cm
Keywords :
X-ray diffraction; dielectric hysteresis; ferroelectric materials; ferroelectric thin films; grain size; lead compounds; scanning electron microscopy; sol-gel processing; 100 nm; 160 degC; 300 degC; PZT; Pb(Zr0.52TiO0.48)O3; PbZrO3TiO3; Pt-Ti-SiO2-Si; Pt/Ti/SiO2/Si substrate; SEM; good crystallinity; grain size; granulated structure; hydrothermal annealing; hydrothermal method; hysteresis loop; pre-baking; pure perovskite phase; sol-gel PZT thin film; Annealing; Crystallization; Electric variables measurement; Grain size; Hysteresis; Semiconductor thin films; Sputtering; Substrates; Temperature; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942468
