Improvement in electrical properties of PbZr/sub 0.4/Ti/sub 0.6/O/sub 3/ thin films using PbTiO/sub 3/ seeding layer

Highly (111) oriented PbZr_0.4T_0.6O₃ (PZT) thin films were fabricated to improve the electrical properties on Pt/IrO₂/Ir/SiO₂/Si substrates using chemical solution deposition method (CSD). The (111) orientation of PZT film was obtained by controlling the processing parameters (excess-Pb and heat-treatment) for formation Of PbTiO₃ seeding layer The orientation and microstructure of PZT films were observed by x-ray diffraction and scanning electron microscopy, respectively. The I(111)/[I(111)+I(110)+I(100)] orientation ratio was changed from 85% to 92% by applying the optimized seeding layer process. The (111) oriented PZT films with seeding layer showed higher switching polarization and improvement of the retention behavior compared to that of PZT films without seeding layer