Title :
Orientation dependent ferroelectric properties of SrBi2Ta2O9 ferroelectric thin films
Author :
Moon, S.E. ; Back, S.B. ; Kwun, S.I. ; Song, T.K. ; Yoon, J.-G.
Author_Institution :
Dept. of Phys., Seoul Nat. Univ., South Korea
Abstract :
SrBi2Ta2O9 (SBT) thin films With various orientations: (001) oriented, partially (115)&(001) oriented, partially (115)&(200) oriented, and (116) oriented films were grown by rf magnetron sputtering deposition method. The orientations of the films were controlled varying the substrate orientation and the deposition temperature. Their structural properties were investigated by the X-ray diffraction θ-2θ scan. Surface morphologies were examined by atomic force microscope. Longer grains were observed in partially oriented and (116) oriented films than those in (001) oriented film. The remanent polarizations were about 3-5 and 10 μC/cm2 in partially oriented films and (116) oriented films, respectively. The activation fields were calculated by measuring the switching currents of the samples. The remanent polarizations and the activation fields of various films were explained in conjunction with the inclination of SBT grains to the film surface
Keywords :
X-ray diffraction; bismuth compounds; dielectric polarisation; ferroelectric materials; ferroelectric switching; ferroelectric thin films; grain size; sputtered coatings; strontium compounds; surface topography; SrBi2Ta2O9; SrBi2Ta2O9 ferroelectric thin films; X-ray diffraction; activation fields; atomic force microscopy; deposition temperature; orientation dependent ferroelectric properties; remanent polarizations; rf magnetron sputtering deposition; substrate orientation; surface morphologies; switching currents; Atomic force microscopy; Atomic layer deposition; Ferroelectric films; Ferroelectric materials; Polarization; Sputtering; Substrates; Surface morphology; Temperature control; X-ray diffraction;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942471
