Title :
Snubberless turn-off capability of four-inch 4.5 kV GCT thyristor
Author :
Takata, I. ; Bessho, M. ; Koyanagi, K. ; Akamatsu, M. ; Satoh, K. ; Kurachi, K. ; Nakagawa, T.
Author_Institution :
Mitsubishi Electr. Corp., Amagasaki city, Japan
Abstract :
The commercial 4" GCT (gate commutated turn-off) thyristors, FGC4000BX-90DS, were typically destroyed just at the critical power density, JA·VAK=3×105 W/cm 2, in snubberless turn-off at VD=2250 V, 125°C. We propose a primitive model which resembles the load-shorted operation of a p-n-p transistor. Our model explains that critical JA·VAK value very well. Taking account of detailed experimental data, we consider that current 4" GCT thyristors operate uniformly and already realize the theoretical turn-off endurance limit. We also propose that an IGBT\´s limit (reverse bias SOA) would be compatible with 3×105 W/cm2
Keywords :
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device reliability; semiconductor device testing; thyristors; 125 C; 2250 V; 4 in; 4.5 kV; GCT thyristor; IGBT reverse bias SOA; critical power density; gate commutated turn-off thyristors; load-shorted operation model; p-n-p transistor; snubberless turn-off; snubberless turn-off capability; thyristor destruction; turn-off endurance limit; uniform operation; Cathodes; Cities and towns; Current density; Driver circuits; Electrodes; Industrial electronics; Insulated gate bipolar transistors; Laboratories; Snubbers; Thyristors;
Conference_Titel :
Power Semiconductor Devices and ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4752-8
DOI :
10.1109/ISPSD.1998.702663
