Title :
Switching properties of the Pb0.9La0.1TiO3 thin film
Author :
Chang, Dong Hoon ; Kang, Seong Jun ; Kim, Sung Jin ; Lee, Kook Pyo ; Yoon, Yung Sup
Author_Institution :
Sch. of Electr. & Comput. Eng., Inha Univ., Inchon, South Korea
Abstract :
Switching properties of the Pb0.9La0.1TiO 3 thin film have been measured. As the external input pulse voltage increases from 2 to 5 V, the switching time decreases from 0.49 to 0.12 μs. The activation energy (Ea) is obtained as 209 kV/cm from the relation between the switching time and the applied pulse voltage. The switched charge densities at 5 V obtained from the hysteresis loop and the polarization switching are 11.69 and 13.02 μC/cm2, respectively, which agree relatively well with each other and show a difference of 10%. As the top electrode area increases from 3.14×10-4 to 5.03×10-3 cm-2, the switching time increases from 0.12 to 1.88 μs. As the load resistance increases from 50 Ω to 33 kΩ, the switching time increases from 0.12 μs to 9.7 μs. These switching characteristics indicate that Pb0.9La0.1TiO3 thin film can be well applied in nonvolatile memory devices
Keywords :
dielectric hysteresis; ferroelectric materials; ferroelectric switching; ferroelectric thin films; lanthanum compounds; lead compounds; 0.12 to 9.7 mus; 0.49 to 0.12 mus; 2 to 5 V; 50 ohm to 33 kohm; Pb0.9La0.1TiO3; Pb0.9La0.1TiO3 thin film; activation energy; applied pulse voltage; external input pulse voltage; hysteresis loop; nonvolatile memory devices; polarization switching; switched charge densities; switching properties; switching time; Electrodes; Ferroelectric materials; Hysteresis; Nonvolatile memory; Polarization; Semiconductor thin films; Space vector pulse width modulation; Thin film devices; Transistors; Voltage;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.942473
