Displacement property of PZT films prepared by CSD method

Al-doped PZT films were prepared using a chemical solution deposition method, and the ferroelectric properties and the displacement properly of the texture oriented PZT films at high electric field were studied. The morphotropic-phase-boundary and rhombohedral PZT film were deposited on (111) oriented Pt layer formed Pt foil substrate, and the (100) or (111) preferred 2 μm-thick PZT film were fabricated by the control of pyrolysis temperature like PZT films deposited on Pt(111)/Ti/SiO₂/Si substrates. In spite of relatively high applied field (about 1 MV/cm), P-E hysteresis curves of the Al-doped PZT thin films were fully saturated and showed comparable ferroelectric properties to bulk PZT ceramics. The displacement property caused by bending motion was measured at high applied field using bipolar and unipolar drive, and the piezoelectric constant, d₃₁, were amounted to -116×10^-12 m/V for the (100) preferred MPB PZT film and d₃₁=-60×10^-12 m/V for the (111) preferred rhombohedral PZT film