Title :
Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study
Author :
Munteanu, Daniela ; Autran, Jean-Luc
Author_Institution :
IM2NP, CNRS, Marseille, France
Abstract :
The response to single-event of 3-D Multi-Channel nanowire MOSFETs is investigated by 3-D numerical simulation. Drain current transient and charge collection are analyzed as function of the ion strike location, direction and track radius.
Keywords :
MOSFET; ion beam effects; nanoelectronics; nanowires; numerical analysis; 3D multichannel nanowire MOSFET; 3D numerical simulation; charge collection; drain current transient; heavy ion irradiation; ion strike location; track radius; Electric potential; FinFETs; Logic gates; Radiation effects; Transient analysis; charge collection; heavy ion; multi-channel nanowire MOSFET´s; single event transient;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location :
Jyvaskyla
Print_ISBN :
978-1-4577-0481-9
DOI :
10.1109/RADECS.2008.5782711
