DocumentCode
3365720
Title
Transient response of 3-D Multi-Channel nanowire MOSFETs submitted to heavy ion irradiation: A 3-D simulation study
Author
Munteanu, Daniela ; Autran, Jean-Luc
Author_Institution
IM2NP, CNRS, Marseille, France
fYear
2008
fDate
10-12 Sept. 2008
Firstpage
198
Lastpage
202
Abstract
The response to single-event of 3-D Multi-Channel nanowire MOSFETs is investigated by 3-D numerical simulation. Drain current transient and charge collection are analyzed as function of the ion strike location, direction and track radius.
Keywords
MOSFET; ion beam effects; nanoelectronics; nanowires; numerical analysis; 3D multichannel nanowire MOSFET; 3D numerical simulation; charge collection; drain current transient; heavy ion irradiation; ion strike location; track radius; Electric potential; FinFETs; Logic gates; Radiation effects; Transient analysis; charge collection; heavy ion; multi-channel nanowire MOSFET´s; single event transient;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems (RADECS), 2008 European Conference on
Conference_Location
Jyvaskyla
ISSN
0379-6566
Print_ISBN
978-1-4577-0481-9
Type
conf
DOI
10.1109/RADECS.2008.5782711
Filename
5782711
Link To Document